Sentaurus Process is an advanced 1D, 2D and 3D process simulator for developing and optimizing silicon process technologies.

Sentaurus Topography is a 2D and 3D simulator for physical modeling of topography-modifying process steps such as deposition, etching, spin-on-glass, reflow and CMP.

Sentaurus Device is an advanced multidimensional (1D/2D/3D) device simulator for electrical, thermal and optical characterization of silicon-based and compound semiconductor devices.

Raphael is the gold standard, 2D and 3D resistance, capacitance and inductance extraction tool for optimizing on-chip parasitic for multi-level interconnect structures in small cells. As a reference field solver, Raphael provides the most accurate parasitic models in the industry.

Sentaurus Workbench is a complete graphical environment for creating, managing, executing, and analyzing TCAD simulations. Its intuitive graphical user interface allows users to navigate and automate efficiently the typical tasks associated with running TCAD simulations.

Sentaurus Structure Editor is a flexible 2D and 3D device structure editor with advanced geometric modeling capabilities to generate structures for TCAD simulation.

Sentaurus TCAD for Manufacturing (TFM) includes PCM Studio and PCM Library, providing an environment for capturing multivariate process–device relationships in process compact models (PCMs).

Synopsys TCAD Services targets the optimization of processes and devices using TCAD tools and the investigation of technology development and manufacturing issues using process and device modeling methods. TCAD Services offers calibration, simulation, model development and consulting to customers.

TCAD device simulation can identify and investigate ESD-relevant effects and the internal behavior of the device under ESD stress conditions, which are not generally accessible by measurement. In particular, TCAD can be successfully used to study 3D effects arising from device layout or inhomogeneous current.

Synopsys TCAD Services offers a range of services to address device optimization and process integration issues in stress engineering, including adding mechanical stress and advanced classical or Monte Carlo device simulations to customer process flows, exploring new structures and processes, and extending simulator capabilities.